DTC144WKAT146

DTC144WKAT146

$0.19
  • Description:TRANS PREBIAS NPN 50V SMT3
  • Series:-

SKU:e2ac01771d81 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):30 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SMT3

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DTC144WKAT146

Overview

The DTC144WKAT146 is a single NPN digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors for simplified circuit design. It operates with a collector-emitter voltage of 50V and supports a continuous collector current of 100mA. The device incorporates an R1/R2 leak absorption resistor configuration with a typical resistance ratio of 0.47. Key electrical parameters include a minimum DC current gain (hFE) of 56 at 5mA and 5V, a maximum operating frequency of 250MHz, and a power dissipation rating of 200mW. It is housed in a compact SOT-323-3 surface-mount package.

Feature Summary

  • Integrates NPN transistor with dual bias resistors to reduce component count and simplify board layout.
  • Features R1/R2 leak absorption topology to mitigate leakage current effects in high-impedance states.
  • Designed for high-speed switching applications with a maximum operating frequency of 250MHz.

Applications

  • General-purpose digital switching circuits
  • Interface drivers between logic gates and loads
  • Level shifting in low-voltage digital systems

Procurement Notes

Verify the specific suffix 'KAT146' against the manufacturer's latest datasheet to confirm tape-and-reel specifications and RoHS compliance status. Ensure that the lead time and availability align with project requirements, as this component may be subject to production lifecycle changes or obsolescence notices from ROHM Semiconductor.

Selection Notes

Select this component when a compact NPN digital transistor with leak absorption characteristics is required. The SOT-323-3 package suits space-constrained designs. Verify that the 50V VCEO and 100mA Ic ratings meet the load requirements. Compare hFE and resistance ratios against alternative models if specific gain or input impedance values are critical for the application.

Part Context

This part belongs to the ROHM DTC144 series of bias-resistor-built-in transistors. The 'WU' designation typically indicates the R1/R2 leak absorption type within the standard DTC144 family. The 'KA' suffix often denotes the specific packaging format, while 'T146' usually refers to the reel quantity or tape specification defined by the manufacturer.

Replacement Considerations

Potential substitutes include other ROHM DTC144 variants such as DTC144WUAT106 or DTC144WU3T106, which share similar electrical characteristics and package types. Cross-reference the specific resistor ratios and hFE ranges with the target application requirements before substitution.

DTC144WKAT146DTC144WKAT146
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