SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DTC144WM3T5G is an NPN Bias Resistor Transistor (BRT) featuring a monolithic bias network with R1 = 47 kΩ and R2 = 22 kΩ. It operates within a collector-emitter voltage range of 50 Vdc and supports continuous collector currents up to 100 mAdc. The device provides a DC current gain (hFE) between 80 and 140 at IC = 5.0 mA. Thermal dissipation reaches 260 mW at 25°C, derating by 2.0 mW/°C above this threshold. Junction and storage temperatures span from -55°C to +150°C. Packaged in SOT-723 (CASE 631AA), it eliminates external discrete resistors.
Verify the specific ordering suffix T5G corresponds to the 8000-unit tape and reel packaging configuration. Confirm that the M3 designation indicates lead-free, halogen-free, and RoHS compliance status as defined by the manufacturer's current product standards before finalizing procurement specifications.
Select this component when a fixed 47 kΩ input resistance and 22 kΩ emitter-base ratio are required. Ensure the 50 V collector-emitter breakdown voltage meets the system's maximum operating limits. Verify that the SOT-723 package dimensions fit the available footprint constraints on the target printed circuit board layout.
This part belongs to the DTC144W family of digital transistors manufactured by onsemi. It shares the same internal electrical architecture and resistor values as other variants in the series but utilizes the SOT-723 surface-mount package. The device serves as a direct functional replacement for discrete biasing networks in standard NPN transistor applications.
Direct substitutes include DTC144WE and NSBC144WF3, which share identical electrical characteristics and resistor values. These alternatives utilize different package styles such as SC-75 and SOT-1123 respectively. Verify pinout compatibility and thermal dissipation requirements when substituting across different package types.