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The DTC614TUT106 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323-3 surface-mount package. It features a built-in bias resistor network with a typical input resistance of 10 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 20 V and a continuous collector current of 600 mA. Key electrical parameters include a minimum DC current gain (hFE) of 820 at 50 mA and 5 V, a maximum operating frequency of 150 MHz, and a power dissipation rating of 200 mW. The emitter-base voltage (VEBO) is rated at 12 V, and the component operates within a temperature range up to +150 C.
Verify the specific suffix configuration against the manufacturer's latest datasheet to ensure compatibility with required thermal and electrical specifications. Confirm RoHS compliance status through official documentation before integration into regulated assemblies. Cross-reference the part number with authorized distributors to validate authenticity and traceability records.
Select this component when a 20 V collector-emitter voltage rating and 600 mA current capacity are required in a small form factor. The 10 kOhm input resistance suits standard logic drive levels. Ensure the application does not exceed the 200 mW power dissipation limit under worst-case thermal conditions.
This part belongs to the DTC614TU series of bias resistor built-in transistors from ROHM Semiconductor. These components are designed to replace discrete resistor-transistor combinations, reducing board space and assembly complexity. The SOT-323-3 packaging is standard for low-power surface-mount applications in consumer electronics.
Direct substitutes may include other NPN digital transistors in SOT-323 packages with similar VCEO and Ic ratings. Verify pinout compatibility and internal resistor values before substitution. Consult ROHM's official cross-reference guides for validated alternatives.