DTC623TUT106

Overview

The DTC623TUT106 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323 (UMT3) surface-mount package. It integrates a bias resistor network with a typical input resistance of 2.2 kOhms. The device supports a collector-emitter voltage of 20 V and a continuous collector current of 600 mA. Key electrical parameters include a minimum DC current gain of 820 at 50 mA and 5 V, a transition frequency of 150 MHz, and a power dissipation rating of 200 mW. The emitter-base voltage is specified at 12 V, with a maximum operating temperature of +150 C.

Feature Summary

• Integrates a pre-biased NPN transistor with a built-in base resistor to simplify circuit design.

Applications

• General-purpose switching applications requiring compact footprint.

Procurement Notes

Verify the specific suffix T106 against the manufacturer's latest datasheet to confirm packaging details and tape-and-reel specifications. Ensure compatibility with standard SMT assembly processes for the UMT3 package. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement orders.

Selection Notes

Select this component when a low-voltage (20 V) NPN switch with high current capability (600 mA) is required. The integrated 2.2 kOhm resistor simplifies drive circuitry compared to discrete transistors. Verify that the 200 mW power dissipation limit accommodates the thermal conditions of the target application environment.

Part Context

This part belongs to the DTC623TU series of bias resistor built-in transistors from ROHM Semiconductor. It is designed as a space-saving alternative to discrete resistor-transistor combinations in surface-mount designs. The UMT3 package provides a small form factor suitable for dense PCB layouts.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference tools or manufacturer documentation for verified equivalents.