DTD113E

Overview

The DTD113E is a single NPN digital transistor manufactured by onsemi, featuring built-in bias resistors within an SOT-23 surface-mount package. It provides a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 100 mA. The device includes two integrated resistors: R1 (base) and R2 (emitter), both specified at 1 kOhms. Key electrical characteristics include a DC current gain (hFE) minimum of 3 at 5 mA and 10 V, and a saturation voltage (Vce(sat)) maximum of 250 mV at 5 mA base and 10 mA collector currents. Power dissipation is rated at 260 mW, with a collector cutoff current of 500 nA maximum.

Feature Summary

• Integrates NPN bipolar junction transistor with dual bias resistors for simplified circuit design
• Provides high switching performance with low saturation voltage for efficient logic interfacing
• Utilizes compact SOT-23 surface-mount packaging to minimize board space requirements

Applications

• Logic level shifting between different voltage domains
• Driver circuits for small-signal loads such as LEDs or relays
• Pull-up/pull-down resistor replacement in digital logic interfaces

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Confirm RoHS compliance status and moisture sensitivity level prior to assembly planning. Ensure the ordering code matches the required tape-and-reel quantity specifications for automated placement processes.

Selection Notes

Select this component when a pre-biased NPN solution is required to reduce external component count. Verify that the 1 kOhm internal resistance values align with the driving source capabilities. Check thermal constraints to ensure power dissipation remains within the 260 mW limit under operating conditions.

Part Context

This part belongs to the DTD series of pre-biased transistors from onsemi. These devices combine a single transistor with internal resistors to replace multiple discrete components. The DTD113E specifically offers NPN configuration with standardized 1 kOhm resistor values for general-purpose switching applications.

Replacement Considerations

Cross-reference with DTA113E for PNP equivalent functionality. Compare with NSBC113EPDXV6T1G for dual NPN configurations in SOT-563 packages. Verify pin compatibility and electrical parameters before substituting with other manufacturers' digital transistors.