SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DTD113ECHZGT116 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SST3 (SOT-23-3) surface-mount package. It features built-in bias resistors with R1 at 1 kOhm and R2 at 10 kOhm. Key electrical parameters include a maximum collector-emitter voltage of 50 V, a continuous collector current of 500 mA, and a power dissipation rating of 200 mW. The device supports a transition frequency of 200 MHz and offers a minimum DC current gain of 82 at 50 mA and 5 V. It is qualified under AEC-Q101 standards for automotive applications.
Verify the exact suffix GT116 against the manufacturer's official datasheet to confirm packaging specifications and tape-and-reel dimensions. Ensure the component meets AEC-Q101 requirements if deployed in automotive systems. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a compact NPN switch with integrated biasing is required for high-frequency operation up to 200 MHz. The 500 mA current capacity suits moderate load driving tasks. Verify that the 1 kOhm base resistor value aligns with the specific drive current requirements of the controlling logic source.
This part belongs to the DTx series of digital transistors from ROHM Semiconductor. These devices combine bipolar junction transistors with internal resistors to replace multiple discrete components. The DTD113E variant specifically denotes the NPN configuration with defined resistance ratios, widely used in consumer and industrial electronics for signal inversion and level shifting.
The typical resistor ratio is 10, corresponding to R1 of 1 kOhm and R2 of 10 kOhm.
Yes, the component is qualified under the AEC-Q101 standard for automotive grade reliability.
The use of thin-film resistors provides complete insulation, allowing for negative input biasing and significantly reducing parasitic effects compared to standard discrete configurations.