DTD113ECHZGT116

DTD113ECHZGT116

$0.18
  • Description:TRANS PREBIAS NPN 0.5A SST3
  • Series:-

SKU:7942ac9ab4bd Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 0.5A SST3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SST3

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DTD113ECHZGT116

Overview

The DTD113ECHZGT116 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SST3 (SOT-23-3) surface-mount package. It features built-in bias resistors with R1 at 1 kOhm and R2 at 10 kOhm. Key electrical parameters include a maximum collector-emitter voltage of 50 V, a continuous collector current of 500 mA, and a power dissipation rating of 200 mW. The device supports a transition frequency of 200 MHz and offers a minimum DC current gain of 82 at 50 mA and 5 V. It is qualified under AEC-Q101 standards for automotive applications.

Feature Summary

  • Integrates bias resistors to simplify circuit design by eliminating external components.
  • Utilizes thin-film resistors for complete insulation and negative input biasing capability.
  • Minimizes parasitic effects due to the specific construction of the internal resistive elements.

Applications

  • Inverter circuits
  • Interface drivers
  • Automotive-grade switching applications

Procurement Notes

Verify the exact suffix GT116 against the manufacturer's official datasheet to confirm packaging specifications and tape-and-reel dimensions. Ensure the component meets AEC-Q101 requirements if deployed in automotive systems. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.

Selection Notes

Select this component when a compact NPN switch with integrated biasing is required for high-frequency operation up to 200 MHz. The 500 mA current capacity suits moderate load driving tasks. Verify that the 1 kOhm base resistor value aligns with the specific drive current requirements of the controlling logic source.

Part Context

This part belongs to the DTx series of digital transistors from ROHM Semiconductor. These devices combine bipolar junction transistors with internal resistors to replace multiple discrete components. The DTD113E variant specifically denotes the NPN configuration with defined resistance ratios, widely used in consumer and industrial electronics for signal inversion and level shifting.

Replacement Considerations

  • DTD113ZCT116

FAQ

What is the resistance ratio between R1 and R2 in the DTD113ECHZGT116?

The typical resistor ratio is 10, corresponding to R1 of 1 kOhm and R2 of 10 kOhm.

Is the DTD113ECHZGT116 suitable for automotive applications?

Yes, the component is qualified under the AEC-Q101 standard for automotive grade reliability.

How does the internal resistor construction affect performance?

The use of thin-film resistors provides complete insulation, allowing for negative input biasing and significantly reducing parasitic effects compared to standard discrete configurations.

DTD113ECHZGT116DTD113ECHZGT116
$0.18
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