DTD113ECT116

Overview

The DTD113ECT116 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-23-3 (SST3) surface-mount package. It integrates bias resistors consisting of thin-film elements with complete insulation to eliminate parasitic effects and allow negative input biasing. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (Ic) of 500 mA, and a maximum power dissipation (Pd) of 200 mW. The device features a typical base resistor (R1) of 1 kOhm and an emitter-base resistor (R2) of 1 kOhm. It operates up to a transition frequency of 200 MHz, with a minimum DC current gain (hFE) of 82 at 50 mA and 5 V, and a maximum collector-emitter saturation voltage of 300 mV.

Feature Summary

• Integrates thin-film bias resistors for simplified inverter circuit configuration without external components.
• Provides complete insulation between bias resistors to enable negative input biasing capabilities.
• Minimizes parasitic effects through integrated resistor design.

Applications

• Inverter circuits
• Digital logic interfaces
• Switching applications

Procurement Notes

Verify the specific suffix 'CT116' against the manufacturer's official datasheet to confirm tape-and-reel packaging details and exact binning. Ensure compatibility with RoHS3 standards if required by the target assembly process. Cross-reference the SST3 package dimensions with PCB footprint libraries prior to procurement to prevent mechanical mismatches during manufacturing.

Selection Notes

Select this component when a single NPN switch with integrated 1 kOhm base resistance is required. The 500 mA current rating suits moderate load switching, while the 200 mW power dissipation limits thermal management requirements. Verify that the 200 MHz transition frequency meets the signal speed requirements of the application circuit before finalizing the design.

Part Context

This part belongs to the ROHM DTx series of digital transistors, which combine bipolar junction transistors with built-in bias resistors. The DTD113ECT116 specifically denotes the NPN polarity variant with 1 kOhm input resistance. It is designed as a drop-in replacement for discrete resistor-transistor networks, reducing board space and assembly complexity in consumer and industrial electronics.

Replacement Considerations

DTB113ECHZGT116 is documented as a parameter-equivalent alternative from the same manufacturer.