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The DTD113ZCT116 is a single NPN digital transistor from ROHM Semiconductor, housed in an SOT-23-3 (SST3) surface-mount package. It integrates biasing resistors with typical values of R1 = 1 kΩ and R2 = 10 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 500 mA, and power dissipation of 200 mW. The device features a minimum DC current gain (hFE) of 82 at 50 mA and 5 V, with a transition frequency of 200 MHz. Saturation voltage is specified at 300 mV under standard test conditions.
Verify the specific ordering suffix against official ROHM documentation to confirm packaging type and tape specifications. Confirm RoHS compliance status through the manufacturer's datasheet or certification documents before integration into final assemblies.
Select this component for designs requiring a compact NPN switch with integrated base biasing. Ensure the required collector current does not exceed 500 mA and that the operating voltage remains below the 50 V VCEO limit. Verify thermal management capabilities given the 200 mW power dissipation rating in the SOT-23 package.
This part belongs to the DTx series of digital transistors manufactured by ROHM Semiconductor. These components combine bipolar junction transistors with internal resistor networks to reduce board space and assembly complexity compared to discrete resistor-transistor combinations.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official ROHM documentation for recommended alternatives or cross-reference guides.