DTD113ZCT116

DTD113ZCT116

$0.20
  • Description:TRANS PREBIAS NPN 50V 0.5A SST3
  • Series:-

SKU:5ff6a9f472be Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.5A SST3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SST3

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DTD113ZCT116

Overview

The DTD113ZCT116 is a single NPN digital transistor from ROHM Semiconductor, housed in an SOT-23-3 (SST3) surface-mount package. It integrates biasing resistors with typical values of R1 = 1 kΩ and R2 = 10 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 500 mA, and power dissipation of 200 mW. The device features a minimum DC current gain (hFE) of 82 at 50 mA and 5 V, with a transition frequency of 200 MHz. Saturation voltage is specified at 300 mV under standard test conditions.

Feature Summary

  • Integrates built-in biasing resistors to simplify circuit design by eliminating the need for external input resistors.
  • Configured as a pre-biased NPN transistor suitable for inverter circuits and switching applications.
  • Operates within a wide storage temperature range from -55°C to +150°C.

Applications

  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm packaging type and tape specifications. Confirm RoHS compliance status through the manufacturer's datasheet or certification documents before integration into final assemblies.

Selection Notes

Select this component for designs requiring a compact NPN switch with integrated base biasing. Ensure the required collector current does not exceed 500 mA and that the operating voltage remains below the 50 V VCEO limit. Verify thermal management capabilities given the 200 mW power dissipation rating in the SOT-23 package.

Part Context

This part belongs to the DTx series of digital transistors manufactured by ROHM Semiconductor. These components combine bipolar junction transistors with internal resistor networks to reduce board space and assembly complexity compared to discrete resistor-transistor combinations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official ROHM documentation for recommended alternatives or cross-reference guides.

DTD113ZCT116DTD113ZCT116
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