DTD113ZSTP

Overview

The DTD113ZSTP is a single NPN pre-biased bipolar junction transistor manufactured by ROHM Semiconductor. It features built-in bias resistors with R1 at 1 kOhms and R2 at 10 kOhms, facilitating simple inverter circuit configuration. The device supports a collector current of 500 mA and a maximum operating frequency of 200 MHz. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, an emitter-base voltage (VEBO) of 1.5 V, and a power dissipation (Pd) of 300 mW. The minimum DC current gain (hFE) is specified as 82 at 50 mA and 5 V. It operates within a temperature range of -55°C to +150°C and utilizes the SPT-3 package.

Feature Summary

• Integrates built-in bias resistors to simplify circuit design by eliminating external input resistor requirements.
• Supports high collector current capacity suitable for driver applications.
• Features through-hole mounting capability via the SPT-3 package for robust mechanical connection.

Applications

• Inverter circuits
• Interface drivers
• General-purpose switching applications

Procurement Notes

Verify the specific package variant when ordering, as the model suffix indicates through-hole construction distinct from surface-mount equivalents. Confirm compliance with automotive reliability standards if the application requires AEC-Q101 certification. Ensure thermal management aligns with the 300 mW power dissipation rating under expected operating conditions. Cross-reference pinout diagrams to match PCB footprint requirements before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring high current handling up to 500 mA with integrated biasing. The through-hole SPT-3 package offers mechanical stability compared to surface-mount options. Consider the 50 V voltage rating and 200 MHz frequency limit for compatibility with target signal speeds. Evaluate thermal performance relative to the 300 mW dissipation limit in enclosed environments.

Part Context

This part belongs to the family of pre-biased transistors designed to reduce component count and assembly time. Unlike standard discrete transistors, it combines a BJT with internal resistors. The DTD113ZSTP specifically addresses the NPN polarity requirement with through-hole packaging, differing from surface-mount variants like the DTC or DTA series found in smaller packages such as SOT-23.

FAQ

What is the internal resistor configuration?

The device includes built-in bias resistors with R1 set to 1 kOhm and R2 set to 10 kOhms.

Is this component available in a surface-mount package?

No, the DTD113ZSTP specifically utilizes the SPT-3 through-hole package; surface-mount versions use different model suffixes.