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The DTD113ZUT106 is a single NPN pre-biased digital transistor manufactured by ROHM Semiconductor. It integrates bias resistors R1 and R2 within a compact UMT3 surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50 V, a continuous collector current of 500 mA, and a transition frequency of 200 MHz. The device features a typical base resistor (R1) of 1 kOhm and an emitter resistor (R2) of 10 kOhm, yielding a resistance ratio of 10. DC current gain (hFE) is specified at a minimum of 82 at 50 mA and 5 V, with a maximum power dissipation of 200 mW.
Verify the specific suffix UT106 against official ROHM documentation to confirm the UMT3 packaging and taping configuration. Ensure compatibility with standard SMD reflow soldering profiles. Confirm RoHS3 compliance status through the manufacturer's latest environmental declaration before finalizing procurement plans.
Select this component when a single NPN switch with integrated biasing is required in a minimal footprint. The 1k/10k resistor ratio suits standard TTL or CMOS logic levels. Consider the 200 mW power dissipation limit and thermal constraints during PCB layout. Verify that the 50V rating meets the application's voltage requirements.
This part belongs to the DTx series of digital transistors from ROHM Semiconductor. The series combines bipolar junction transistors with internal bias networks. The DTD113 variant specifically denotes an NPN configuration with a 1:10 resistor ratio. The ZUT106 suffix indicates the specific tape-and-reel packaging format.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other NPN digital transistors having similar 50V, 500mA ratings and UMT3/SOT-323 packages only after verifying pinout and electrical parameter equivalence.