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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.5A SPT
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Box (TB)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：300 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：SC-72 Formed Leads
- Supplier Device Package：SPT
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Overview
The DTD114ESTP is an NPN digital transistor from ROHM Semiconductor, featuring built-in thin-film bias resistors. It operates with a supply voltage of 50V and supports a continuous collector current of 500mA. The device includes a 10kΩ input resistor (R1) and a 10kΩ emitter-base resistor (R2), yielding a resistance ratio of approximately 1. Key electrical parameters include a minimum DC current gain of 56 at 50mA/5V, a transition frequency of 200MHz, and a maximum power dissipation of 200mW. It is housed in the SMT3 package.
Feature Summary
- Built-in bias resistors enable inverter circuit configuration without external input components.
- Thin-film resistors provide complete isolation, allowing negative input biasing and minimizing parasitic effects.
Applications
- Inverter circuits
- Interface applications
- Driver circuits
Procurement Notes
Verify the specific suffix 'TP' against official documentation to confirm packaging details such as tape width or reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the SMT3 package dimensions align with your PCB footprint design constraints before finalizing procurement.
Selection Notes
Select this component when a compact NPN solution with integrated biasing is required for switching applications. The 10kΩ input resistance suits standard logic levels. Verify that the 50V collector-emitter breakdown voltage and 500mA current capacity exceed the peak operational demands of the load. Consider the 200mW power dissipation limit during thermal analysis.
Part Context
This part belongs to the DTD114EK/ES series of digital transistors with built-in resistors. It utilizes an NPN epitaxial planar silicon structure. The device is designed for general-purpose electronic equipment, including audio-visual, office automation, and communication devices, rather than high-reliability safety-critical systems.
Replacement Considerations
The DTD114EKT146 is listed as a parameter-equivalent alternative within the same manufacturer's portfolio. Verify pinout compatibility between the SMT3 packages and ensure electrical characteristics match the original design requirements before substitution.
