DTD123ECT116

DTD123ECT116

$0.24
  • Description:TRANS PREBIAS NPN 50V 0.5A SST3
  • Series:-

SKU:5c08a398aac1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.5A SST3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:39 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SST3

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DTD123ECT116

Overview

The DTD123ECT116 is a single NPN digital transistor from the ROHM DTx series, housed in an SOT-23-3 (SST3) surface-mount package. It integrates bias resistors with typical values of 2.2 kOhms for both R1 and R2. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 500 mA, and power dissipation of 200 mW. The device features a minimum DC current gain (hFE) of 39 at 50 mA and 5 V, a transition frequency of 200 MHz, and an emitter-base voltage (VEBO) of 3 V. Maximum operating temperature reaches +150 C.

Feature Summary

  • Integrates thin-film bias resistors to enable inverter circuit configuration without external input components.
  • Utilizes completely isolated resistors to allow negative input biasing and minimize parasitic effects.

Applications

  • Inverter circuits
  • Driver circuits
  • Logic level shifting

Procurement Notes

Verify the specific suffix 'T116' against the official datasheet to confirm tape-and-reel packaging and quantity specifications. Ensure the component meets RoHS3 compliance requirements for the target assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for low-power switching applications. The 50 V rating and 500 mA current capacity suit general-purpose logic interfacing. Verify that the 2.2 kOhm internal resistance aligns with the driving source capabilities and desired switching speed for the specific design constraints.

Part Context

This part belongs to the ROHM DTx series of digital transistors, which combine bipolar junction transistors with built-in bias networks. The SST3 package designation corresponds to the standard SOT-23-3 form factor, widely used in space-constrained consumer and industrial electronics for efficient board layout.

Replacement Considerations

  • DTD123EC
  • DTD123ECT106

FAQ

What is the function of the internal resistors in the DTD123ECT116?

The internal resistors serve as bias networks, allowing the transistor to operate as a switch or inverter without requiring external resistors, thereby simplifying the circuit design.

Can the DTD123ECT116 handle negative bias voltages?

Yes, the bias resistors are constructed using thin-film technology with complete isolation, which allows for negative biasing of the input terminal.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is specified as 50 V.

DTD123ECT116DTD123ECT116
$0.24
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