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The DTD123ECT116 is a single NPN digital transistor from the ROHM DTx series, housed in an SOT-23-3 (SST3) surface-mount package. It integrates bias resistors with typical values of 2.2 kOhms for both R1 and R2. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 500 mA, and power dissipation of 200 mW. The device features a minimum DC current gain (hFE) of 39 at 50 mA and 5 V, a transition frequency of 200 MHz, and an emitter-base voltage (VEBO) of 3 V. Maximum operating temperature reaches +150 C.
Verify the specific suffix 'T116' against the official datasheet to confirm tape-and-reel packaging and quantity specifications. Ensure the component meets RoHS3 compliance requirements for the target assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when a compact NPN solution with integrated biasing is required for low-power switching applications. The 50 V rating and 500 mA current capacity suit general-purpose logic interfacing. Verify that the 2.2 kOhm internal resistance aligns with the driving source capabilities and desired switching speed for the specific design constraints.
This part belongs to the ROHM DTx series of digital transistors, which combine bipolar junction transistors with built-in bias networks. The SST3 package designation corresponds to the standard SOT-23-3 form factor, widely used in space-constrained consumer and industrial electronics for efficient board layout.
The internal resistors serve as bias networks, allowing the transistor to operate as a switch or inverter without requiring external resistors, thereby simplifying the circuit design.
Yes, the bias resistors are constructed using thin-film technology with complete isolation, which allows for negative biasing of the input terminal.
The maximum collector-emitter voltage (VCEO) is specified as 50 V.