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The DTD123TCT116 is a single NPN digital transistor from ROHM Semiconductor, housed in an SOT-23-3 surface-mount package. It integrates bias resistors with a typical input resistance of 2.2 kOhms. The device supports a collector continuous current of 500 mA and operates with a maximum collector-emitter voltage (VCEO) of 40 V. Key electrical parameters include a minimum DC current gain (hFE) of 100 at 50 mA and 5 V, a transition frequency of 200 MHz, and power dissipation of 200 mW. It functions within a temperature range up to +150°C.
Verify the specific suffix TCT116 against official ROHM documentation to confirm packaging details such as reel or cut tape specifications. Ensure compatibility with RoHS requirements and check for any automotive qualification status if intended for vehicle electronics, as standard versions may not be recommended for such use.
Select this component when a compact NPN digital transistor with integrated biasing is required for space-constrained designs. Consider the 40 V voltage rating and 500 mA current capacity against load requirements. Verify that the 2.2 kOhm internal resistance aligns with the driving source impedance and desired switching speed for the target application.
This part belongs to the DTx series of digital transistors from ROHM Semiconductor. These devices combine bipolar junction transistors with internal bias resistors to reduce component count and board space. The DTD123TCT116 represents a specific variant within this family, optimized for general-purpose switching and inversion tasks in consumer and industrial electronics.
Publicly confirmed substitute part numbers are not available in the provided data. Consult manufacturer cross-reference tools for equivalent components with matching pinouts, voltage ratings, and current capacities.