DTD123YCHZGT116

DTD123YCHZGT116

$0.24
  • Description:TRANS PREBIAS NPN 50V 0.5A SST3
  • Series:-

SKU:fdaf4d3930e1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.5A SST3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SST3

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DTD123YCHZGT116

Overview

The DTD123YCHZGT116 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-23-3 surface-mount package. It integrates biasing resistors with a typical input resistance of 2.2 kOhms and an emitter-base resistance of 10 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 500 mA. Key electrical parameters include a minimum DC current gain (hFE) of 100 at 50 mA and 5 V, a transition frequency of 200 MHz, and a power dissipation rating of 200 mW. It operates up to a maximum temperature of +150 C and holds AEC-Q101 automotive qualification.

Feature Summary

  • Integrates built-in biasing resistors to simplify circuit design by eliminating the need for external input components.
  • Automotive-grade reliability certified under the AEC-Q101 standard for high-temperature operation.

Applications

  • Inverter circuits
  • Interface applications
  • Driver circuits

Procurement Notes

Verify the specific suffix GT116 against official ROHM documentation to confirm reel packaging and tape specifications. Ensure the component meets AEC-Q101 requirements for your target application environment. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and current production status before finalizing procurement plans.

Selection Notes

Select this component when an NPN digital transistor with a 50 V collector-emitter breakdown and 500 mA current capacity is required. The integrated 2.2 kOhm input resistor suits direct logic interface applications. Verify that the SOT-23-3 package dimensions fit the PCB layout constraints and that the 200 mW power dissipation rating accommodates the thermal conditions of the final assembly.

Part Context

This part belongs to the DTD123 series of pre-biased transistors from ROHM Semiconductor. It serves as the NPN counterpart to PNP variants within the same family. The series is designed for compact designs requiring simplified biasing networks in automotive and industrial electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult ROHM technical support or authorized distributors for verified cross-references based on specific electrical and mechanical constraints.

FAQ

What is the configuration of the internal resistors?

The DTD123YCHZGT116 features built-in biasing resistors with an input resistance (R1) of 2.2 kOhms and an emitter-base resistance (R2) of 10 kOhms.

Is this component qualified for automotive applications?

Yes, the DTD123YCHZGT116 is qualified according to the AEC-Q101 standard for automotive grade reliability.

What is the maximum operating junction temperature?

The maximum operating temperature for this device is +150 C.

DTD123YCHZGT116DTD123YCHZGT116
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