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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.5A SMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SMT3
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Overview
The DTD123YKT146 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SMT3 (SOT-23) surface-mount package. It features built-in bias resistors consisting of thin-film components for complete isolation. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 50 V and a continuous collector current (Ic) of 500 mA. The device has a maximum power dissipation (Pd) of 200 mW and a transition frequency (fT) of 200 MHz. The typical base input resistor (R1) is 2.2 kOhms, while the emitter-base resistor (R2) is 10 kOhms. The DC current gain (hFE) is specified at a minimum of 56 at Ic=50mA and Vce=5V.
Feature Summary
- Built-in bias resistors enable inverter circuit configuration without external input resistors.
- Thin-film resistors provide complete insulation, allowing negative input biasing.
- Design simplification through elimination of parasitic effects associated with discrete resistors.
Applications
- Inverter circuits requiring simplified design
- General-purpose switching applications
- Low-power signal processing interfaces
Procurement Notes
Verify the specific suffix KT146 to confirm the tape-and-reel packaging format and quantity. Ensure compatibility with standard SMT3 footprint dimensions during PCB layout. Confirm RoHS compliance status through official manufacturer documentation prior to integration into regulated assemblies.
Selection Notes
Select this component when a compact NPN solution with integrated biasing is required for space-constrained designs. The 50V rating suits low-voltage logic interfacing. Verify that the 2.2kOhm base resistance aligns with the driving source impedance requirements for the intended switching speed.
Part Context
This part belongs to the DTD123EK series of digital transistors from ROHM. It serves as a pre-biased alternative to discrete BJT configurations, reducing component count and board area. The SMT3 package offers a small form factor suitable for high-density surface mount assembly processes.
Replacement Considerations
Direct pin-compatible substitutes within the same family include DTD123ECT116 and DTD123EKT146, though resistor values may differ. Verify equivalent hFE and VCEO ratings before substitution to ensure circuit performance consistency.
