DTD513ZE3TL

Overview

The DTD513ZE3TL is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-416 (EMT3) surface-mount package. It integrates bias resistors with a typical input resistance of 1 kOhms and a resistor ratio of 10. Key electrical parameters include a maximum collector-emitter voltage of 12 V, continuous collector current of 500 mA, and power dissipation of 150 mW. The device features a minimum DC current gain of 140 at 100 mA and 2 V, with a transition frequency up to 260 MHz. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Integrates bias resistors for simplified circuit design
• High-speed switching capability with 260 MHz transition frequency
• Compact SMD packaging suitable for automated assembly

Applications

• General-purpose switching circuits
• Driver applications for logic interfaces
• Signal level shifting in digital systems

Procurement Notes

Verify the specific suffix 'E3' against the manufacturer's latest documentation to confirm compliance with RoHS directives and material composition requirements. Confirm that the SOT-416 package dimensions align with your PCB footprint specifications before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN digital transistor with low input resistance is required. Ensure the 12 V voltage rating and 500 mA current capacity meet the load requirements. Consider the thermal performance given the 150 mW power dissipation limit in the small SOT-416 package.

Part Context

This part belongs to ROHM's standard series of Bias Resistor Built-in Transistors (BRBTs). It is designed to replace discrete resistor-transistor combinations, reducing board space and assembly costs. The DTD513ZE3TL is a lead-free variant of the DTD513ZE3 series.

Replacement Considerations

Direct substitutes may include other NPN digital transistors with similar R1/R2 values and SOT-416 packaging, such as parts from ON Semiconductor or STMicroelectronics, provided electrical ratings match.