DTD523YETL

DTD523YETL

$0.41
  • Description:TRANS PREBIAS NPN 12V 0.5A EMT3
  • Series:-

SKU:0e571cf75cba Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 12V 0.5A EMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):12 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:260 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:EMT3

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DTD523YETL

Overview

The DTD523YETL is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-416 (EMT3) surface-mount package. It integrates bias resistors with a typical input resistance of 2.2 kOhms and a resistor ratio of 4.5. Key electrical parameters include a maximum collector-emitter voltage of 300 mV, continuous collector current of 500 mA, and power dissipation of 150 mW. The device features a minimum DC current gain of 140 at 100 mA and 2 V, with a transition frequency up to 260 MHz. It operates within a temperature range up to +150 C and includes an emitter-base voltage rating of 2.5 V.

Feature Summary

  • Integrates built-in bias resistors to simplify circuit design and reduce component count.
  • Provides high-speed switching capabilities suitable for digital logic applications.
  • Offers low saturation voltage for efficient power consumption during operation.

Applications

  • General-purpose digital switching circuits
  • Interface between microcontrollers and peripheral devices
  • Logic level translation and buffer stages

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration, such as reel or cut tape options. Confirm RoHS compliance status through official documentation before integration. Check lead times as manufacturing cycles may vary based on production schedules. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to maintain component integrity prior to assembly.

Selection Notes

Select this component when a compact NPN digital transistor with integrated biasing is required for space-constrained designs. Consider the 500 mA collector current limit and 150 mW power dissipation for thermal management. Verify that the 2.2 kOhm input resistance matches the driving source requirements. Compare against alternative series like DTB523YE if PNP polarity is needed instead of NPN.

Part Context

This part belongs to the DTD523YE series of digital transistors from ROHM Semiconductor. These components are standard products designed for general electronic applications. The EMT3 package provides a small footprint suitable for automated surface mount assembly processes. The series is recognized for its reliability in consumer and industrial electronics where space efficiency is critical.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Consult manufacturer cross-reference lists for potential alternatives. Ensure any replacement matches the SOT-416 package and NPN polarity specifications.

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