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The DTD543XE3TL is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-416 (EMT3) surface-mount package. It features built-in bias resistors configured as a leak absorption type with R1 at 4.7 kOhms and R2 at 47 kOhms. Key electrical parameters include a maximum collector-emitter voltage of 12 V, continuous collector current of 500 mA, and power dissipation of 150 mW. The device offers a minimum DC current gain (hFE) of 140 at 100 mA and 2 V, with a transition frequency of 260 MHz. Operating temperature ranges from -55°C to +150°C.
Verify the specific suffix 'E3' indicates RoHS compliance status through official manufacturer documentation before procurement. Confirm packaging options such as cut tape or reel availability directly with authorized distributors. Ensure the component meets environmental regulations required for the target market. Cross-reference the full part number against the latest datasheet revision to confirm pinout and electrical characteristics remain unchanged.
Select this component when a single NPN switch with integrated base and emitter resistors is required. The 4.7 kOhm input resistance suits standard logic drive levels. Verify that the 12 V breakdown voltage and 500 mA current capacity exceed the application's peak requirements. Consider the SOT-416 package size constraints during PCB layout planning.
This part belongs to ROHM's DTD series of bias-resistor-built-in transistors. It shares the same physical package and general topology as other variants like DTC143XE3TL but differs in internal resistor values and gain specifications. The 'XE3' designation typically denotes specific manufacturing lot or compliance attributes within the product line.
Direct substitutes may include DTC143XE3TL if resistor ratios align with design needs, though hFE and R2 values differ. Check equivalent parts from other manufacturers offering NPN digital transistors in SOT-416 packages with similar 12V/500mA ratings.