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The DTD543ZE3TL is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-416 (EMT3) surface-mount package. It integrates bias resistors with a leak absorption type configuration, featuring typical values of R1 at 4.7 kOhms and R2 at 47 kOhms. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 12 V, a continuous collector current of 500 mA, and a saturation voltage (VCE(sat)) of 300 mV at specified currents. The device supports a transition frequency of 260 MHz, offers a minimum DC current gain (hFE) of 140 at 100 mA and 2 V, and dissipates up to 150 mW. It operates within a temperature range extending to +150°C.
Verify the specific suffix 'E3' against the manufacturer's datasheet to confirm compliance with RoHS directives and lead-free manufacturing standards. Confirm that the SOT-416 package dimensions align with the target PCB footprint requirements. Ensure the ordering quantity matches the standard reel or cut-tape packaging specifications provided by authorized distributors.
Select this component when a compact NPN solution with integrated biasing is required for space-constrained designs. The 12 V rating suits low-voltage logic systems, while the 500 mA current capacity supports moderate load driving. Compare the 4.7 kOhm input resistance against other variants if specific base drive current limitations exist in the application circuit.
This part belongs to the DTD543 series of bias resistor built-in transistors from ROHM Semiconductor. The 'ZE3' designation typically indicates the specific resistor ratio and environmental compliance status within the product line. It shares the same physical package and general performance envelope as related models like the DTD543XE3TL, differing primarily in internal resistor network configurations.
The DTD543ZE3 is listed as an alias for this component. Verify compatibility with DTD543XE3TL only if the specific resistor ratio difference is acceptable for the circuit design. No other direct substitutes are confirmed in the available documentation.