SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DTD743EETL is an NPN digital transistor from the Rohm Semiconductor DTD743E series, featuring built-in bias resistors in an EMT3 (SOT-416) surface-mount package. It supports a maximum collector current of 200 mA and a supply voltage of 30 V with a power dissipation of 150 mW. The internal circuit includes two thin-film resistors, R1 and R2, both valued at 4.7 kOhms. Key electrical characteristics include a DC current gain (GI) of 115 minimum at 100 mA output, a transition frequency (fT) of 260 MHz, and a saturation voltage (VO(on)) of 0.3 V maximum at 50 mA output.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific ordering suffixes that may indicate packaging variations. Ensure the supplier provides valid traceability documentation matching the DTD743E series specifications before finalizing acquisition.
Select this component when designing circuits requiring simplified biasing networks for NPN switching applications. The integrated 4.7 kOhm resistors reduce board space and design complexity compared to discrete resistor configurations. Verify that the 200 mA current rating and 30 V breakdown voltage align with the target load requirements and operating conditions.
This device belongs to the DTD743E series of digital transistors manufactured by Rohm Semiconductor. These components are designed as standard products for general-purpose electronic equipment. The series utilizes thin-film technology for the internal resistors to ensure stability and performance across various temperature ranges.
DTB743E series parts serve as complementary PNP replacements. Verify pinout compatibility and electrical parameter alignment, specifically collector current and voltage ratings, before substituting in existing designs.
Both the base resistor (R1) and emitter resistor (R2) are integrated with a nominal value of 4.7 kOhms.
Yes, the thin-film resistors provide complete isolation, allowing for negative biasing of the input terminal.
The maximum power dissipation is 150 mW at an ambient temperature of 25°C.