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The DTD743EMT2L is an NPN digital transistor from the Rohm Semiconductor DTD743E series, featuring built-in biasing resistors R1 and R2, both valued at 4.7 kΩ. It supports a maximum collector current of 200 mA and a supply voltage of 30 V. The device operates with a transition frequency of 260 MHz and has a power dissipation rating of 150 mW. Packaged in the compact VMT3 (SOT-723) surface-mount format, it integrates thin-film resistors for complete isolation, allowing negative input biasing while eliminating parasitic effects.
Verify the specific package variant when ordering, as the DTD743E series includes both EMT3 and VMT3 options. Confirm that the T2L suffix corresponds to the VMT3 package with an 8,000-unit reel size. Ensure compliance with RoHS standards if required by the target application. Check for lead-free certification documentation directly from the manufacturer or authorized distributors before finalizing procurement.
Select this component for applications requiring integrated biasing to reduce external component count. The 4.7 kΩ resistor values are suitable for standard logic interface levels. Consider the 200 mA collector current limit and 30 V breakdown voltage when designing load circuits. The VMT3 package offers a small footprint ideal for space-constrained designs compared to larger SOT packages.
This part belongs to the DTD743E series of NPN digital transistors manufactured by Rohm Semiconductor. The series is characterized by low saturation voltage and integrated bias resistors. Complementary PNP types are available within the DTB743E series. The product is designed for general-use electronic equipment and is not intended for radiation-tolerant or high-reliability safety-critical applications.
Direct functional substitutes within the same series include other variants of the DTD743E family, such as DTD743EE, provided the package type matches the design requirements. Verify pinout compatibility and electrical parameters against the specific replacement datasheet before implementation.
The built-in resistors R1 and R2 (both 4.7 kΩ) allow the transistor to be used in inverter circuits without connecting external input resistors, simplifying the circuit design.
Yes, the bias resistors consist of thin-film resistors with complete isolation, which allows for negative biasing of the input terminal.
The maximum collector current (IC(MAX)) is 200 mA.