DXTN69060CE-7

Single Bipolar Transistors Overview

The DXTN69060CE-7 is an NPN single bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a surface-mount SOT223-4 package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 7 V. The device supports a continuous collector current of 5.5 A with a power dissipation rating of 2 W. It features a low collector-emitter saturation voltage of 180 mV, a DC current gain (hFE) range of 80 to 475, and a transition frequency (fT) of 200 MHz. The component operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed for high-efficiency switching applications with low saturation voltage characteristics.
• Capable of handling significant continuous collector current within a compact surface-mount footprint.
• Engineered for thermal stability across a wide operating temperature range.

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Power management modules
• Driver stages for loads requiring moderate current

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and packaging configuration against the manufacturer's latest documentation before procurement. Confirm that the required tape and reel quantity aligns with production needs. Ensure compliance with RoHS directives as indicated in the official datasheet. Cross-reference the part number with authorized distributors to guarantee authenticity and traceability. Check for any recent lifecycle status updates to ensure long-term availability.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with a 60 V rating and 5.5 A current capacity is required in an SOT223-4 package. Consider the 200 MHz transition frequency for medium-speed switching applications. Evaluate the thermal performance requirements against the 2 W power dissipation limit. Compare the hFE range and saturation voltage against circuit design specifications to ensure adequate drive efficiency and signal integrity.

Single Bipolar Transistors Part Context

This part belongs to the DXTN series of power transistors from Diodes Incorporated. The series focuses on providing high-performance solutions for modern electronic designs. The DXTN69060CE-7 specifically addresses applications needing reliable NPN switching capabilities with standardized pinouts. It represents a silicon-based solution optimized for cost-effective mass production while maintaining strict electrical tolerances.

Single Bipolar Transistors Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute maintains the SOT223-4 package dimensions and thermal characteristics. Ensure the replacement device meets or exceeds the 60 V VCEO and 5.5 A Ic specifications. Check for equivalent saturation voltage and gain parameters to maintain circuit performance.