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The DXTP3C100PDQ-13 is a dual PNP low saturation transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) exceeding -100V and supports a continuous collector current of -3A with a peak pulse current of -8A. The device exhibits a typical collector-emitter saturation resistance (RCE(sat)) of 110mΩ. Rated for operation up to +175°C, it is housed in a PowerDI5060-8/SWP package. The component is AEC-Q101 qualified and suitable for automotive applications requiring specific change control.
Verify the exact ordering suffix '-13' against the manufacturer's official documentation to confirm the reel size and quantity per reel. Confirm that the 'Q' designation aligns with the required automotive PPAP capabilities and IATF16949 manufacturing certification. Ensure the specified tape width matches the automated assembly equipment requirements before finalizing procurement orders.
Select this component when a dual PNP configuration is required within a high-density surface-mount footprint. The PowerDI5060-8 package provides efficient heat dissipation suitable for environments with elevated ambient temperatures. Verify that the -100V breakdown voltage and -3A continuous current ratings exceed the maximum circuit demands to ensure reliable operation under all expected load conditions.
This part belongs to the DXTP3 series of dual PNP low saturation transistors from Diodes Incorporated. It serves as the complementary counterpart to the NPN variant, DXTN3C100PDQ. Both devices share similar electrical characteristics and packaging, facilitating balanced design implementations in push-pull or bridge configurations where matched performance is beneficial.
The datasheet explicitly identifies the DXTN3C100PDQ as the complementary part. Direct substitution requires verifying polarity compatibility. No other cross-model replacements are documented in the provided source material.