E3M0021120K

$34.34

Description：SIC, MOSFET, 21M, 1200V, TO-247-
Series：E
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:e2a4a5c7edd5 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 21M, 1200V, TO-247-
Series：E
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：104A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：28.8mOhm @ 62.1A, 15V
Vgs(th) (Max) @ Id：3.6V @ 17.1mA
Gate Charge (Qg) (Max) @ Vgs：177 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：405W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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E3M0021120K

Overview

The Wolfspeed E3M0021120K is a third-generation silicon carbide (SiC) N-channel enhancement mode MOSFET designed for automotive applications. It features a TO-247-4L package with a separate driver source pin to minimize gate ringing and switching losses. The device offers a maximum drain-source voltage of 1200 V and a typical on-resistance of 21 mΩ at 25°C. It supports continuous drain currents up to 104 A at 25°C case temperature and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Third-generation SiC MOSFET technology optimized for high blocking voltage and low on-resistance.
Package design includes a separate driver source pin to reduce switching losses and minimize gate ringing.
Fast intrinsic diode with low reverse recovery charge suitable for hard-switching applications.
Automotive qualified under AEC-Q101 standards and capable of PPAP submission.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify the specific ordering suffix and revision level against the latest official datasheet before procurement. Confirm that the component meets the required AEC-Q101 qualification status and PPAP capability if mandated by the target automotive application. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the documentation.

Selection Notes

Select this component for designs requiring high-voltage isolation and efficient power conversion in automotive environments. The separate driver source pin necessitates careful PCB layout to leverage its noise reduction benefits. Evaluate the trade-off between the low on-resistance and the internal gate resistance when designing the gate drive circuitry for optimal switching performance.

Part Context

This part belongs to Wolfspeed's E-Series Automotive line, representing their third-generation silicon carbide technology. It is an N-channel enhancement mode MOSFET intended to replace traditional silicon devices in high-efficiency power systems. The TO-247-4L package provides robust mechanical mounting and thermal dissipation capabilities for demanding industrial and automotive use cases.

Replacement Considerations

Direct replacements are not explicitly listed in the public documentation. Designers should evaluate other Wolfspeed SiC MOSFETs within the same voltage class and package type, ensuring compatibility with existing gate drive requirements and thermal constraints.

FAQ

What is the purpose of the separate driver source pin?

The separate driver source pin is included in the TO-247-4L package to minimize gate ringing and reduce switching losses by providing a dedicated path for the driver return current.