E3M0040120J2-TR

$18.98

Description：40m, 1200V SiC FET, TO-263-7 XL
Series：E
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:54cfdf1f8fa7 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：40m, 1200V SiC FET, TO-263-7 XL
Series：E
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：53mOhm @ 31.9A, 15V
Vgs(th) (Max) @ Id：3.8V @ 8.77mA
Gate Charge (Qg) (Max) @ Vgs：91 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：2726 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：294W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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E3M0040120J2-TR

Overview

The Wolfspeed E3M0040120J2 is a third-generation silicon carbide (SiC) MOSFET in the E-Series automotive line. It features a TO-263-7XL package with a separate Kelvin source pin for optimized gate drive performance. Key electrical parameters include a drain-source voltage of 1200 V, a maximum continuous drain current of 63 A at 25°C case temperature, and a typical on-resistance of 40 mΩ. The device supports junction temperatures up to 175°C and includes an intrinsic body diode with low reverse recovery charge.

Feature Summary

Third-generation SiC technology with high blocking voltage and low on-resistance
Optimized package design featuring a separate driver source pin to minimize gate ringing
Automotive qualified under AEC-Q101 standards with PPAP capability
Fast intrinsic diode characterized by low reverse recovery charge

Applications

Motor Control systems
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify the specific ordering suffix J2 corresponds to the TO-263-7XL package variant when sourcing. Confirm that the component meets AEC-Q101 qualification requirements for your intended automotive application. Ensure compatibility with the recommended solder pad layout provided in the datasheet to maintain thermal and electrical integrity during assembly.

Selection Notes

Select this component for designs requiring high efficiency and power density in automotive environments. The separate Kelvin source pin facilitates precise gate control, reducing switching losses and electromagnetic interference. Consider the 1200V rating and 63A current capacity relative to your system's peak load and thermal management capabilities to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to Wolfspeed's E-Series, which focuses on automotive-grade silicon carbide solutions. The series is designed to support various electric vehicle architectures, including battery electric vehicles (BEVs), plug-in hybrid electric vehicles (PHEVs), and fuel cell electric vehicles (FCEVs). The E-Series leverages Wolfspeed's legacy of durability and reliability for harsh operating conditions.