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Product Detailed Parameters
- Description：SIC, MOSFET, 45M, 650V, TO-247-4
- Series：E
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：60mOhm @ 17.6A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 4.84mA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1593 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
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Overview
The Wolfspeed E3M0045065K is an N-Channel Enhancement Mode Silicon Carbide MOSFET utilizing third-generation technology. It features a TO-247-4L package with a separate driver source pin and 8mm creepage distance. Key electrical parameters include a 650V drain-source voltage, 45mΩ on-resistance at 25°C, and 150W power dissipation. The device supports junction temperatures up to 175°C and includes automotive AEC-Q101 qualification.
Feature Summary
- Automotive qualified (AEC-Q101) and PPAP capable
- Optimized package with separate driver source pin
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery
Applications
- Motor Control
- EV Battery Chargers
- High Voltage DC/DC Converters
Procurement Notes
Verify the specific revision status of the component against the latest datasheet documentation prior to procurement. Confirm that the TO-247-4L package dimensions align with the target PCB layout requirements. Ensure compliance with RoHS and REACH standards as specified in the manufacturer's declaration for this part number.
Selection Notes
Select this component for applications requiring high blocking voltage combined with low on-state resistance. The separate driver source pin facilitates reduced gate ringing and improved switching performance. Consider the thermal characteristics and maximum operating temperature when designing the heat dissipation system for the target application environment.
Part Context
This discrete silicon carbide power MOSFET belongs to the E-Series lineup designed for automotive and industrial markets. It represents Wolfspeed's third-generation SiC technology, offering enhanced durability and reliability compared to previous iterations. The device is engineered to support various hard-switching and resonant topologies within the broader portfolio of power conversion solutions.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical ratings carefully when considering equivalent devices from other manufacturers.
