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Product Detailed Parameters
- Description：MVF 200MM QUALIFIED MATERIAL
- Series：*
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The Wolfspeed E3M0160120U2 is an automotive-grade, single N-channel Silicon Carbide (SiC) MOSFET from the Gen 3 E-Series. It features a 1200 V drain-source breakdown voltage and a maximum continuous drain current of 18 A. The device exhibits a typical on-resistance of 160 mΩ at 25°C. It operates within a junction temperature range of -55°C to +175°C and utilizes a TO-263-7 Top-Side Cooling (TSC) package for enhanced thermal management.
Feature Summary
- Top-side cooling architecture enables direct heat dissipation through the package surface, improving thermal performance and allowing for double-sided PCB utilization.
- Automotive qualification compliant with AEC-Q101 standards, ensuring reliability for demanding onboard electric vehicle applications.
- Enhanced creepage distance design supports high-voltage system safety requirements in compact form factors.
Applications
- Onboard chargers (OBC) for battery electric vehicles
- DC-DC converters in hybrid and electric powertrains
- Fuel cell electric vehicle power systems
Procurement Notes
Verify the specific suffix 'U2' to confirm the Top-Side Cooling package variant, as standard TO-263 packages differ thermally. Confirm AEC-Q101 compliance status for your specific automotive tier requirements. Check for PPAP documentation availability if required by your OEM supply chain protocols. Ensure gate drive specifications align with the device's threshold and charge characteristics.
Selection Notes
Select this component when high thermal efficiency and automotive reliability are critical. The TSC package is suitable for designs requiring superior heat dissipation without relying solely on bottom-side PCB cooling. Consider the 160 mΩ on-resistance for balancing conduction losses against switching performance in 1200 V systems.
Part Context
This part belongs to Wolfspeed's E-Series discrete SiC MOSFETs, designed specifically for the automotive market. The series offers various packages and die sizes to support diverse EV architectures, including BEVs, PHEVs, and FCEVs. The Gen 3 technology provides proven durability and reliability metrics for high-volume production environments.
Replacement Considerations
Direct pin-compatible replacements may exist within other manufacturers' TO-263-7 TSC portfolios, but thermal resistance and electrical parameters must be verified. Standard bottom-cooling TO-263 variants are not functionally equivalent due to significant differences in thermal impedance and mounting requirements.
