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Product Detailed Parameters
- Description：SICFET N-CH 900V 11.5A TO247-3
- Series：E-Series
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：364mOhm @ 7.5A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs：9.5 nC @ 15 V
- Vgs (Max)：+18V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：54W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The Wolfspeed E3M0280090D is a third-generation automotive-qualified N-channel enhancement mode Silicon Carbide (SiC) MOSFET. It features a 900 V drain-source voltage rating and a maximum on-resistance of 364 mΩ at 150 °C. The device operates with a recommended gate-source voltage of -4 V to +15 V and supports continuous drain currents up to 7.5 A at 100 °C case temperature. Packaged in a TO-247-3 leaded format, it offers low output capacitance and fast intrinsic diode switching characteristics suitable for high-frequency power conversion.
Feature Summary
- Automotive qualified under AEC-Q101 standards with PPAP capability
- High blocking voltage combined with low on-state resistance
- Fast intrinsic body diode with minimal reverse recovery charge
- Low capacitances enabling high-speed switching performance
Applications
- Automotive EV battery chargers
- Renewable energy systems
- High voltage DC/DC converters
- Telecom power supplies
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation when sourcing this component. Confirm that the TO-247-3 package matches your board layout requirements. Ensure compatibility with the specified -4 V to +15 V gate drive range for proper operation within the rated junction temperature limits.
Selection Notes
Select this component for designs requiring robust automotive-grade reliability and high-voltage handling. The TO-247-3 package facilitates efficient thermal management through direct case mounting. Consider the trade-off between the moderate on-resistance and the benefits of SiC technology for applications prioritizing system efficiency over absolute lowest conduction loss.
Part Context
This part belongs to Wolfspeed's E-Series discrete Silicon Carbide MOSFET portfolio. These devices are engineered specifically for demanding automotive environments, offering proven durability and reliability. The series provides various die sizes and packages to support diverse power conversion topologies across electric vehicle and industrial markets.
Replacement Considerations
Direct replacements must match the 900 V rating, TO-247-3 package, and electrical characteristics. Verify pinout compatibility and thermal resistance specifications before substitution.
