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Product Detailed Parameters
- Description：MOSFET P-CH 12V 10A 8ECH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：12.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-ECH
- Package / Case：8-SMD, Flat Leads
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Overview
The ECH8308-TL-H is a P-channel enhancement-mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 12 V and a continuous drain current of 10 A. The device utilizes an ECH surface-mount package with eight pins, measuring 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. Key electrical parameters include a maximum on-resistance of 33 mΩ, a typical gate charge of 26 nC at 4.5 V, and a maximum power dissipation of 1.6 W. The component operates up to a junction temperature of +150 °C.
Feature Summary
- P-channel enhancement mode configuration for high-side switching applications
- Low on-resistance characteristic for efficient power handling
- Compact ECH surface-mount package design
Applications
- General purpose power switching circuits
- Load management systems
- Power distribution units
Procurement Notes
Verify the specific ordering suffix TL-H against official onsemi documentation to confirm exact tape and reel specifications. Ensure compliance with RoHS and halide-free material requirements as stated in manufacturer datasheets. Confirm that the ECH package outline matches your PCB footprint constraints before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage P-channel switch is required with moderate current capacity. The 12 V rating suits 5 V or 3.3 V logic systems. Consider the 33 mΩ resistance for thermal management needs. The single transistor configuration simplifies circuit layout compared to dual packages.
Part Context
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET category. It is designed for general-purpose switching tasks in consumer and industrial electronics. The ECH package provides a compact solution for space-constrained designs requiring reliable power control.
Replacement Considerations
Direct substitutes must match the 12 V, 10 A, P-channel specification and ECH-8 pin package. Verify equivalent Rds(on) and gate charge values to ensure performance parity.
