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Product Detailed Parameters
- Description：PCH 2.5V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The ECH8311-TL-H is a P-channel enhancement-mode MOSFET from onsemi, designed for low-voltage switching applications. It features a maximum drain-source voltage (Vds) of 12 V and a continuous drain current (Id) of 10 A. The device utilizes the compact ECH package with an 8-pin surface-mount configuration, measuring 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. Key electrical parameters include a maximum on-resistance (Rds(on)) of 33 mΩ, a gate threshold voltage (Vgs(th)) up to 1.3 V, and a typical gate charge of 26 nC at 4.5 V. It supports a maximum power dissipation of 1.6 W and operates at temperatures up to +150 °C.
Feature Summary
- Optimized for 2.5 V gate drive operation to enhance efficiency in low-voltage systems.
- High current capability with 10 A continuous drain current in a compact footprint.
- Low on-resistance design minimizes conduction losses during switching operations.
Applications
- Low-voltage DC-DC converter circuits
- Battery-powered portable devices
- Power management modules requiring efficient switching
Procurement Notes
Verify the specific suffix TL-H against official onsemi documentation to confirm tape-and-reel packaging and lead-free status. Ensure the ordering part number matches the required voltage and current ratings for your circuit design. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component when a P-channel MOSFET with 12 V rating and 10 A capacity is required in an 8-pin ECH package. Consider the 2.5 V gate drive compatibility if driving directly from low-voltage logic or controllers. Evaluate thermal performance based on the 1.6 W power dissipation limit and ambient operating conditions.
Part Context
This device belongs to onsemi's ECH series of single FETs and MOSFETs. The series focuses on providing high-performance discrete power solutions for space-constrained applications. The ECH8311-TL-H specifically addresses the need for efficient P-channel switching in modern low-voltage electronic designs.
Replacement Considerations
Check for direct substitutes within the ECH series such as ECH8308-TL-H (12 V, 10 A) or ECH8320-TL-H (20 V, 9.5 A). Verify pinout compatibility and electrical parameter overlaps before substitution. Consult official cross-reference guides for validated alternatives.
