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Product Detailed Parameters
- Description：MOSFET N-CH 30V 10A 8ECH
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：15mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-ECH
- Package / Case：8-SMD, Flat Leads
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Overview
The ECH8402-TL-E is an N-Channel MOSFET from onsemi, designed for general-purpose switching applications. It features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 10 A at ambient temperature. The device is housed in an 8-ECH surface-mount package. Key electrical characteristics include a maximum Input Capacitance (Ciss) of 1400 pF measured at Vds = 10 V. The component supports an operating junction temperature up to 150°C and has a thermal dissipation rating of 1.6 W at Ta.
Feature Summary
- N-Channel Metal Oxide Semiconductor Field-Effect Transistor technology
- Surface Mount packaging for automated assembly integration
- High junction temperature capability for robust thermal operation
Applications
- General-purpose switching device applications
Procurement Notes
Verify the current product status before design finalization, as this specific part number may be discontinued or obsolete according to manufacturer notifications. Confirm availability through authorized distributors or alternative sourcing channels if active procurement is required. Ensure that any substitute components meet the original voltage, current, and package specifications to maintain system integrity.
Selection Notes
Select this component for low-voltage, moderate-current switching tasks requiring an N-Channel MOSFET. The 30 V rating suits 5 V or 12 V systems. The 8-ECH package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management requirements given the 1.6 W dissipation limit and 150°C junction temperature capability to ensure reliable long-term operation under load.
Part Context
This component belongs to the Single FETs and MOSFTs category within onsemi's discrete semiconductor portfolio. It is classified as a standard product intended for industrial, automotive, and consumer electronics markets. The device utilizes silicon MOS technology, aligning with the company's broader range of power分立器件 solutions designed for efficiency and reliability in various electronic systems.
Replacement Considerations
Public documentation indicates NTMD4801N as a potential replacement or related part number associated with this discontinuance notice. Verify pinout compatibility and electrical parameter equivalence before substitution.
