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Product Detailed Parameters
- Description：MOSFET N-CH 20V 14A 8ECH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：6.8mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：2430 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-ECH
- Package / Case：8-SMD, Flat Leads
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Overview
The onsemi ECH8420-TL-H is an N-channel silicon MOSFET designed for general-purpose switching applications. It features a 20V drain-to-source voltage rating and supports a continuous drain current of 14A at 25°C ambient temperature. The device utilizes an 8-ECH surface-mount package, measuring 2.9mm x 2.3mm x 0.9mm. Key electrical characteristics include a maximum gate-source voltage of ±12V, a typical on-resistance of 5.2mΩ at 4.5V drive, and a gate charge of 29nC at 4.5V. It operates with a junction temperature up to 150°C and power dissipation of 1.6W.
Feature Summary
- N-channel silicon MOSFET technology optimized for low on-resistance performance
- Capable of operation with a 1.8V gate drive signal for efficient control
- Halogen-free compliance ensuring adherence to environmental standards
- Compact 8-ECH surface-mount package suitable for space-constrained designs
Applications
- General-purpose switching devices in electronic circuits
- Low-voltage power management systems requiring high efficiency
- Automotive electronics utilizing robust switching components
Procurement Notes
Verify the specific ordering suffix against official datasheets to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets halogen-free requirements if mandated by project standards. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement plans.
Selection Notes
Select this component when a 20V N-channel MOSFET with low RDS(on) is required for general switching tasks. The 1.8V drive capability makes it suitable for logic-level control interfaces. Ensure the application environment stays within the 150°C junction temperature limit and verify that the 8-ECH package dimensions fit the PCB layout constraints effectively.
Part Context
This part belongs to the ECH series of surface-mount MOSFETs from onsemi, designed for compact power switching solutions. The ECH package provides a small footprint while maintaining adequate thermal performance for moderate power levels. It complements other discrete semiconductors in power management and signal switching applications across industrial and automotive sectors.
Replacement Considerations
Direct substitutes may include other 20V N-channel MOSFETs in similar packages with comparable current ratings. Verify pinout compatibility and thermal resistance values when considering alternatives. Consult official replacement guides for cross-reference data to ensure functional equivalence in existing circuit designs.
