ECH8601M-TL-H-P

Overview

The ECH8601M-TL-H-P is an N-channel enhancement mode MOSFET from onsemi, packaged in the ECH8 surface-mount format. It features a drain-to-source voltage rating of 24 V and a continuous drain current of 8 A. The device incorporates dual common-drain configurations with integrated protection diodes and built-in gate protection resistors. Key electrical parameters include a maximum static drain-to-source on-state resistance (RDS(on)) of 35 mΩ at VGS=2.5V and ID=2A, and a total gate charge of 7.5 nC at VGS=4.5V. It supports low-voltage drive capabilities down to 2.5 V and operates within a channel temperature range up to 150 °C.

Feature Summary

• Dual common-drain configuration with integrated body protection diodes
• Built-in gate protection resistor for enhanced stability
• Optimized for low-voltage operation with 2.5 V drive capability
• Halogen-free compliance for environmental safety

Applications

• Lithium-ion battery charging switches
• Lithium-ion battery discharging switches
• Low-voltage power management circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging and material specifications. Confirm that the component meets required RoHS and halogen-free standards for the intended application environment. Ensure compatibility with the specified ECH8 package dimensions during PCB layout design.

Selection Notes

Select this component for applications requiring low on-resistance and high efficiency in compact footprints. Consider the 2.5 V drive requirement when designing gate driver circuits. Evaluate thermal dissipation capabilities based on the allowable power dissipation ratings under specific mounting conditions.

Part Context

This part belongs to onsemi's ECH series of power MOSFETs, designed for space-constrained portable electronics. The ECH8 package provides a small form factor suitable for high-density board layouts. The dual-drain architecture facilitates efficient current handling in battery-powered devices.

Replacement Considerations

Direct substitutes must match the 24 V rating, 8 A current capacity, and ECH8 package. Verify equivalent RDS(on) and gate charge characteristics to ensure circuit performance parity.