ECH8601M-TL-H

ECH8601M-TL-H

  • Description:MOSFET 2N-CH 24V 8A 8ECH
  • Series:-

SKU:4e2f16a67401 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 24V 8A 8ECH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss):24V
  • Current - Continuous Drain (Id) @ 25°C:8A (Ta)
  • Rds On (Max) @ Id, Vgs:23mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id:1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:8-ECH
  • Grade:-
  • Qualification:-

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ECH8601M-TL-H

Overview

The ECH8601M-TL-H is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 24 V and a continuous drain current of 8 A. The device exhibits a static drain-to-source on-state resistance of 23 mΩ. It operates within a channel temperature range of -55 °C to +150 °C and has a maximum allowable power dissipation of 1.5 W when mounted on a ceramic substrate. The component utilizes an ECH-8 surface-mount package with dimensions of 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height.

Feature Summary

  • Dual common-drain configuration designed for integrated circuit applications
  • Built-in gate protection resistor for enhanced reliability
  • Integrated protection diode structure

Applications

  • Li-ion battery charging switch circuits
  • Li-ion battery discharging switch circuits
  • Low on-resistance power switching applications

Procurement Notes

Verify the specific ordering suffix TL-H against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure that the ECH-8 package footprint matches the design requirements. Cross-reference the part number with authorized distributors to confirm current availability and authenticity before procurement.

Selection Notes

Select this component for applications requiring low on-resistance in a compact dual MOSFET format. The 2.5 V drive capability supports logic-level interfacing. Consider the 1.5 W power dissipation limit and thermal management requirements when designing the PCB layout. Verify compatibility with Li-ion battery management systems due to the specific built-in protection features.

Part Context

This device belongs to the ECH series of dual MOSFETs from onsemi. It is distinct from single-channel variants and other voltage ratings within the same package family. The ECH-8 package provides a small form factor suitable for space-constrained portable electronics and battery-powered devices.

Replacement Considerations

Check for direct substitutes with identical 24 V rating, 8 A current capacity, and 23 mΩ Rds(on). Verify pinout compatibility for the ECH-8 package. Confirm that replacement parts maintain the same built-in gate protection resistor and common-drain configuration.

ECH8601M-TL-HECH8601M-TL-H

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