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The ECH8601M-TL-H is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 24 V and a continuous drain current of 8 A. The device exhibits a static drain-to-source on-state resistance of 23 mΩ. It operates within a channel temperature range of -55 °C to +150 °C and has a maximum allowable power dissipation of 1.5 W when mounted on a ceramic substrate. The component utilizes an ECH-8 surface-mount package with dimensions of 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height.
Verify the specific ordering suffix TL-H against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure that the ECH-8 package footprint matches the design requirements. Cross-reference the part number with authorized distributors to confirm current availability and authenticity before procurement.
Select this component for applications requiring low on-resistance in a compact dual MOSFET format. The 2.5 V drive capability supports logic-level interfacing. Consider the 1.5 W power dissipation limit and thermal management requirements when designing the PCB layout. Verify compatibility with Li-ion battery management systems due to the specific built-in protection features.
This device belongs to the ECH series of dual MOSFETs from onsemi. It is distinct from single-channel variants and other voltage ratings within the same package family. The ECH-8 package provides a small form factor suitable for space-constrained portable electronics and battery-powered devices.
Check for direct substitutes with identical 24 V rating, 8 A current capacity, and 23 mΩ Rds(on). Verify pinout compatibility for the ECH-8 package. Confirm that replacement parts maintain the same built-in gate protection resistor and common-drain configuration.