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The ECH8649-TL-H is a dual N-channel enhancement-mode MOSFET from onsemi, housed in an 8-pin ECH surface-mount package. It features a maximum drain-source voltage of 20 V and a continuous drain current of 7.5 A. The device has a maximum on-resistance of 13 mΩ and a typical gate charge of 11 nC at 4.5 V. Dimensions are 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. It supports a maximum power dissipation of 1.3 W and operates up to +150 °C.
Verify the obsolete status of this specific part number before procurement planning. Check for availability through authorized distributors or secondary markets. Confirm that substitute components meet all electrical and mechanical specifications required for your design. Ensure compatibility with existing PCB footprints and thermal management strategies when transitioning to replacement parts.
Select this component for designs needing two independent N-channel switches in a small footprint. The 20 V rating suits low-voltage DC systems. Consider the 7.5 A current capacity for moderate load applications. Evaluate thermal performance given the 1.3 W dissipation limit. Verify that the ECH package dimensions fit within the available board space constraints.
This part belongs to onsemi's ECH series of dual MOSFETs. These devices are designed for space-constrained power applications. The ECH package provides a compact solution compared to discrete single transistors. This specific model represents a higher current variant within the family, offering improved performance over lower-rated counterparts while maintaining similar physical dimensions.
ECH8697R-TL-W is listed as a similar substitute option.