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The onsemi ECH8651R-TL-HX is a dual N-channel power MOSFET array housed in an 8-ECH surface-mount package. It features a drain-source voltage rating of 24 V and a continuous drain current of 10 A at 25 °C. The device exhibits a maximum on-resistance of 14 mΩ at Vgs = 4.5 V and Id = 5 A, with a typical gate charge of 24 nC at Vgs = 10 V. Designed for logic-level driving, it supports a maximum power dissipation of 1.5 W and operates within a junction temperature range up to +150 °C.
Verify the specific suffix 'HX' against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMD reflow profiles and check for any updated RoHS compliance declarations prior to final procurement authorization.
Select this component when a dual N-channel topology is required for space-constrained designs. The 24 V rating suits low-voltage systems, while the 10 A current capacity supports moderate load requirements. Evaluate thermal performance based on the 1.5 W dissipation limit and PCB copper area availability for adequate heat spreading.
This part belongs to the ECH series of power MOSFETs from onsemi, characterized by small footprint packages designed for high-density mounting. The ECH8651 variant specifically targets applications needing dual switches in a minimal board area, offering a balance between current handling and physical size constraints.
The ECH8697R-TL-W is identified as a direct replacement option within the same manufacturer portfolio. Verify pinout compatibility and electrical parameter alignment before substituting.