ECH8659-M-TL-H

Description：MOSFET 2N-CH 30V 7A 8ECH
Series：-

SKU:b6f58ad233f8 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 7A 8ECH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：7A
Rds On (Max) @ Id, Vgs：24mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：11.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：710pF @ 10V
Power - Max：1.5W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：8-ECH
Grade：-
Qualification：-

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ECH8659-M-TL-H

Overview

The ECH8659-M-TL-H is a dual N-channel Power MOSFET manufactured by onsemi using trench technology. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 24mΩ at VGS=4.5V and 55mΩ at VGS=4V. Key electrical parameters include a gate charge (Qg) of 18nC at VGS=10V, a threshold voltage (Vgs(th)) of 2.6V, and a power dissipation (Pd) of 1.3W. The component operates within a junction temperature range up to 150°C and is housed in an 8-ECH surface-mount package.

Feature Summary

Utilizes trench technology to minimize gate charge and achieve low on-resistance for efficient power switching.
Dual N-channel configuration provides integrated switching capability in a compact surface-mount footprint.
Logic-level gate drive compatibility supports direct interfacing with standard control logic signals.

Applications

Industrial motor control systems
DC-DC converter circuits
Power management modules

Procurement Notes

Verify the specific suffix 'M' against the official datasheet to confirm pinout and thermal characteristics match the design requirements. Ensure the ordering information aligns with the 8-ECH package dimensions. Confirm RoHS compliance status through the manufacturer's environmental classification documents before finalizing procurement specifications.

Selection Notes

Select this component when a dual N-channel MOSFET with 30V rating and 7A current capacity is required. The low on-resistance makes it suitable for applications prioritizing efficiency. Consider the 8-ECH package size for PCB layout constraints. Verify that the gate charge characteristics meet the switching frequency requirements of the target circuit design.

Part Context

This part belongs to the ECH series of dual N-channel MOSFET arrays from onsemi. These devices are designed for high-efficiency power switching applications. The trench technology platform is optimized for minimizing losses while maintaining robust reliability. This specific model integrates two channels in a single package to save board space.