ECH8695R-TL-W

Overview

The onsemi ECH8695R-TL-W is a dual N-channel enhancement mode MOSFET array housed in an 8-ECH surface-mount package. It features a drain-source breakdown voltage of 24 V and supports a continuous drain current of 11 A. The device exhibits a maximum on-resistance of 13.3 mΩ at specified conditions, with a gate threshold voltage up to 1.3 V. Operating within a temperature range of -55°C to +150°C, it dissipates up to 1.4 W of power. Key electrical characteristics include a typical gate charge of 10 nC at 4.5 V and a maximum gate-source voltage rating of ±12.5 V.

Feature Summary

• Dual N-channel configuration for efficient space-constrained designs
• Low on-resistance for improved power efficiency
• High-temperature operation capability up to 150°C

Applications

• DC-DC converter circuits
• Power management modules
• Automotive electronics systems

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before procurement. Confirm that the 8-ECH package dimensions match the target PCB footprint requirements. Ensure thermal management strategies account for the 1.4 W power dissipation limit under expected operating loads.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The 24 V rating suits 12 V nominal systems. Compare the 13.3 mΩ on-resistance against alternative packages to balance conduction losses with physical size constraints. Verify gate drive compatibility with the 1.3 V threshold voltage specification.

Part Context

This part belongs to the ECH869xR series of dual MOSFET arrays from onsemi. These components are designed for high-density power switching applications where small form factors are critical. The ECH package provides a robust surface-mount solution suitable for automated assembly processes in consumer and industrial electronics manufacturing.

Replacement Considerations

Cross-reference with other 24 V dual N-channel MOSFETs in similar packages if supply is constrained. Verify pinout compatibility and thermal performance metrics before substitution.