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The EFC4612R-TR is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a WLCSP-4 surface-mount package. The device features a drain-source breakdown voltage of 24 V and supports a continuous drain current of 6 A. Its on-resistance is specified at 45 mOhms, with a gate-source voltage range of -12 V to 12 V and a threshold voltage of 1.3 V. Power dissipation is rated at 1.6 W, and it operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized onsemi distributors or certified suppliers. Confirm RoHS compliance status via official Material Composition Declaration documents. Check for End-of-Life (EOL) notices or Product Change Notifications (PCN) prior to procurement. Ensure the WLCSP-4 package matches design requirements. Validate technical specifications against the latest datasheet version.
Select this component for designs requiring dual N-channel switching in a compact WLCSP-4 footprint. Consider the 24 V rating and 6 A current capacity for low-voltage power paths. Evaluate thermal performance given the 1.6 W power dissipation limit. Verify compatibility with system voltage levels and operating temperature ranges from -55°C to +150°C.
This part belongs to the EFC4612R series of MOSFETs from onsemi. It is categorized under Transistors and specifically MOSFETs. The manufacturer identifies it as an N-Channel device suitable for SMD/SMT installation. The product is listed as discontinued or having restricted supply availability in some regions.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support for direct replacements.