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Product Detailed Parameters
- Description：MOSFET N-CH 24V 6A EFCP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：24 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：31mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：EFCP1515-4CC-037
- Package / Case：4-XFBGA, FCBGA
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Overview
The EFC4615R is an N-channel silicon MOSFET designed as a general-purpose switching device. It features a common-drain configuration with dual gates and dual sources for parallel operation. The component supports a source-to-source voltage of 24V and handles a continuous DC source current of 6A, with pulse capability up to 60A. It operates effectively with a 2.5V drive level, exhibiting a maximum on-state resistance of 52mΩ at VGS=2.5V. Key electrical parameters include a breakdown voltage of 24V, total gate charge of 8.8nC, and a forward source-to-source voltage of 1.2V at 6A.
Feature Summary
- Optimized for low-voltage drive applications with effective operation at 2.5V gate-to-source voltage
- Dual-gate, dual-source architecture facilitates parallel connection for enhanced current handling
- Common-drain topology specifically suited for battery charging and discharging switch functions
Applications
- Lithium-ion battery charging switches
- Lithium-ion battery discharging switches
- General-purpose electronic equipment switching
Procurement Notes
Verify the manufacturer origin, as the datasheet identifies SANYO Semiconductor Co., Ltd. rather than onsemi. Confirm package type EFCP and taping specifications match requirements. Ensure compliance with standard application guidelines, avoiding use in safety-critical or special applications without prior consultation. Check for RoHS and material composition documentation if required by your supply chain standards.
Selection Notes
Select this component for low-side switching applications requiring high efficiency at low gate drive voltages. The dual-gate design allows for improved thermal performance and current sharing when paralleled. Consider the 24V rating and 6A continuous current limit for system power budgeting. Evaluate the 52mΩ on-resistance at 2.5V drive against your specific load requirements to ensure adequate conduction losses are managed within the thermal constraints of the EFCP package.
Part Context
This device is an N-channel enhancement mode MOSFET manufactured by SANYO Semiconductor. It utilizes silicon technology optimized for low-voltage, high-efficiency switching. The part is packaged in the EFCP format, designed for surface-mount assembly. It belongs to the category of general-purpose discrete semiconductors intended for consumer electronics, office equipment, and industrial control systems where reliable switching at low drive levels is necessary.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility (Source-Gate-Gate-Source) and electrical ratings before considering any alternative components from other manufacturers.
