EFC4K105NUZTDG

FET, MOSFET Arrays Overview

The EFC4K105NUZTDG is a dual N-channel Power MOSFET designed for 1-2 cell lithium-ion battery protection. It features a WLCSP10 package (3.40 x 1.96 x 0.10 mm). Key electrical parameters include a source-to-source breakdown voltage of 22 V, a continuous source current of 25 A, and a maximum pulse source current of 100 A. The on-state resistance varies from 3.55 mΩ at 4.5 V to 7.2 mΩ at 2.5 V gate drive. Total gate charge is 43 nC, with a junction temperature rating up to 150°C.

FET, MOSFET Arrays Feature Summary

• Optimized for low-voltage drive applications with effective performance at 2.5 V gate-source voltage.
• Incorporates an ESD diode-protected gate structure to enhance device reliability against electrostatic discharge events.
• Utilizes a common-drain configuration suitable for compact power switch implementations in portable electronics.

FET, MOSFET Arrays Applications

• Power switches for portable machines
• Lithium-ion battery charging and discharging switches
• Protection circuits for 1-2 cell lithium-ion battery packs

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TDG to confirm the tape and reel packaging format containing 5,000 units per reel. Ensure compatibility with the WLCSP10 mechanical case outline (CASE 567PL) during PCB footprint design. Confirm that the component meets Pb-Free and Halogen Free requirements as specified in the datasheet documentation.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring a dual N-channel MOSFET with a very small footprint. The device is appropriate for systems operating with limited gate drive voltages, specifically those utilizing 2.5 V or higher logic levels. Consider the thermal resistance characteristics and ensure adequate copper area on the substrate to manage total dissipation within the rated limits.

FET, MOSFET Arrays Part Context

This device belongs to the EFC4 series of power MOSFETs manufactured by onsemi. It is specifically engineered for battery management applications where space constraints are critical. The technology utilizes silicon planar stripe architecture to achieve low on-state resistance within the ultra-thin WLCSP10 package form factor.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution lists for verified alternatives. Generic cross-references may not match the specific WLCSP10 dimensions or the 2.5 V drive optimization characteristics documented for this part number.

FET, MOSFET Arrays FAQ

What is the maximum source-to-source breakdown voltage?

The maximum source-to-source breakdown voltage is 22 V.

Does the device include gate protection features?

Yes, the device features an ESD diode-protected gate structure.

What is the package type and dimensions?

The package is WLCSP10 with dimensions of 3.40 mm x 1.96 mm x 0.10 mm.