EFC6604R-A-TR

Description：MOSFET N-CH 24V 6A EFCP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:00a5ebf8f568 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 24V 6A EFCP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-EFCP (1.9x1.46)
Package / Case：6-SMD, No Lead

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EFC6604R-A-TR

Overview

The EFC6604R-A-TR is a dual N-channel MOSFET array manufactured by onsemi. It utilizes silicon technology and is housed in a WLCSP-6 surface-mount package. The device features a drain-source breakdown voltage of 24 V and supports a continuous drain current of 13 A. Its typical on-resistance is 11.5 mΩ, with a gate charge of 48 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 2 W.

Feature Summary

Dual N-channel configuration for compact circuit integration
Logic-level gate drive capability optimized for low-voltage control
Enhancement mode operation with high thermal stability

Applications

Low-side switching in portable electronic devices
Power management circuits requiring small form factors
Battery-powered equipment load switches

Procurement Notes

Verify the specific suffix 'A' against official datasheets to confirm any distinct marking or lot traceability requirements. Confirm package availability as distribution status may vary. Ensure compatibility with existing PCB footprint designs before procurement.

Selection Notes

Select this component for applications demanding a dual N-channel solution in a minimal footprint. Evaluate the 11.5 mΩ on-resistance against thermal constraints. Verify that the 24 V rating exceeds peak circuit voltages and that the 13 A current capacity meets load requirements.

Part Context

This part belongs to onsemi's EliteSiC family portfolio, though it is a silicon-based device. It serves as a complementary component to other power management solutions offered by the manufacturer, targeting efficiency improvements in consumer and industrial electronics through advanced packaging technologies.