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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 10A 6EFCP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Rds On (Max) @ Id, Vgs：13.3mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：19.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.6W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：6-EFCP (1.9x1.46)
- Grade：-
- Qualification：-
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Overview
The EFC6605R is a dual N-channel Power MOSFET from onsemi, housed in the EFCP package. It features a 20V source-to-source breakdown voltage and supports a continuous DC source current of 10A. The device offers low on-state resistance, with typical values ranging from 8.8mΩ to 13.9mΩ depending on gate drive conditions. Key electrical characteristics include a maximum gate threshold voltage of 1.3V and a total gate charge of 19.8nC. The component includes an integrated protection diode and provides 2KV ESD HBM protection. It operates within a junction temperature range up to 150°C.
Feature Summary
- Dual common-drain configuration for efficient power switching
- Integrated protection diode for circuit safety
- High electrostatic discharge robustness rated at 2KV HBM
- Halogen-free compliance for environmental standards
Applications
- Lithium-ion battery charging switches
- Lithium-ion battery discharging switches
Procurement Notes
This specific part number is discontinued and no longer recommended for new designs. Verification of availability requires direct contact with onsemi representatives. Do not assume standard distribution channels will stock this item. Confirm end-of-life status and obsolescence timelines before initiating any procurement processes.
Selection Notes
Designers should evaluate alternative components as this device is obsolete. When selecting replacements, consider parameters such as the 20V voltage rating, 10A current capacity, and the specific EFCP package dimensions. Verify that substitute devices meet the required thermal resistance and on-state resistance specifications for the intended application.
Part Context
The EFC6605R belongs to the Dual EFCP series of N-channel Power MOSFETs manufactured by onsemi. This series is designed for applications requiring compact dual-transistor solutions with low on-resistance. The EFCP package provides a specific footprint suitable for surface-mount assembly.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Contact onsemi representatives for guidance on modern equivalents.
