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The EKI04036 is a 40 V, 80 A N-channel Trench Power MOSFET manufactured by Sanken Electric USA Inc. It features a maximum on-resistance of 3.9 mΩ at VGS = 10 V and ID = 58.5 A. The device supports 4.5 V gate drive with a total gate charge of 26.4 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to 150 °C and utilizes a TO-220-3L package.
Verify the component against the official datasheet revision (EKI04036-DSE Rev.1.4) to ensure accuracy. Confirm that the TO-220-3L package matches the required physical dimensions and lead configuration. Check for RoHS compliance status and confirm the manufacturer's current production status before finalizing procurement plans.
Select this component for applications requiring low conduction losses and fast switching speeds. Ensure the thermal design accommodates the specified thermal resistance values. Verify that the gate drive voltage meets the minimum requirements for optimal performance. Consider derating guidelines for continuous drain current based on operating temperatures.
This part belongs to Sanken Electric's lineup of discrete semiconductors designed for power electronics. It complements their broader portfolio of motor drivers and power management ICs used in home appliances, automobiles, and industrial equipment. The company focuses on high-efficiency solutions for power conversion systems.
SKI04033
The maximum pulsed drain current is 161 A with a pulse width less than or equal to 100 µs and a duty cycle less than or equal to 1%.
No, the product is not intended for use in aerospace equipment or other specific applications requiring extremely high reliability where failure may result in serious injury or death.