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Product Detailed Parameters
- Description：MOSFET N-CH 75V 46A TO-220
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13.6mOhm @ 22.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 650µA
- Gate Charge (Qg) (Max) @ Vgs：36.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2520 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：90W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The EKI07174 is an N-channel Trench Power MOSFET manufactured by Sanken Electric. It features a drain-to-source voltage rating of 75 V and a continuous drain current capacity of 46 A at a case temperature of 25 °C. The device exhibits a maximum static drain-to-source on-resistance of 14.1 mΩ at VGS = 10 V and 15.9 mΩ at VGS = 4.5 V. Total gate charge is specified as 33.0 nC at VGS = 10 V and 15.0 nC at VGS = 4.5 V. It operates within a junction temperature range up to 150 °C and utilizes a TO220-3L package.
Feature Summary
- N-channel Trench structure designed for low on-resistance and high-speed switching performance
- Capable of operation with a 4.5 V gate drive signal
- Includes 100% Unclamped Inductive Load (UIL) testing for reliability verification
- RoHS compliant construction with lead-free pins
Applications
- DC-DC converters
- Synchronous rectification circuits
- General power supplies
Procurement Notes
Verify the component datasheet revision status before procurement, as the document indicates this part is not recommended for new designs. Confirm that the TO220-3L package dimensions and thermal resistance values align with your specific board layout and cooling requirements. Ensure compliance with export control regulations if applicable to your region.
Selection Notes
Select this component when a 75 V breakdown voltage and 46 A continuous current capability are required in a through-hole package. Consider the thermal resistance characteristics and derating curves for high-power applications. Evaluate the gate charge specifications against your driver capabilities, particularly for 4.5 V logic-level driving scenarios.
Part Context
This device belongs to Sanken Electric's lineup of N-channel Trench Power MOSFETs. These components are engineered for efficient power conversion in general-purpose electronic equipment. The product line emphasizes low on-resistance and fast switching speeds to improve overall system efficiency in power supply architectures.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Sanken Electric sales representatives for alternative recommendations or updated series replacements suitable for new designs.
