EL357NE-VG

EL357NE-VG

  • Description:OPTOISO 3.75KV 1CH TRANS 4-SOP
  • Series:-
  • Mfr:Everlight Electronics Co Ltd
  • Package:Tube

SKU:61169d9a70ca Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:OPTOISO 3.75KV 1CH TRANS 4-SOP
  • Series:-
  • Mfr:Everlight Electronics Co Ltd
  • Package:Tube
  • Number of Channels:1
  • Voltage - Isolation:3750Vrms
  • Current Transfer Ratio (Min):100% @ 5mA
  • Current Transfer Ratio (Max):200% @ 5mA
  • Turn On / Turn Off Time (Typ):-
  • Rise / Fall Time (Typ):3µs, 4µs
  • Input Type:DC
  • Output Type:Transistor
  • Voltage - Output (Max):80V
  • Current - Output / Channel:50mA
  • Voltage - Forward (Vf) (Typ):1.2V
  • Current - DC Forward (If) (Max):50 mA
  • Vce Saturation (Max):200mV
  • Operating Temperature:-55°C ~ 110°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, Gull Wing
  • Supplier Device Package:4-SOP (2.54mm)
  • Grade:-
  • Qualification:-

Download product information

EL357NE-VG

Overview

The EL357NE-VG is a single-channel phototransistor output optocoupler manufactured by Everlight Electronics. It integrates an infrared emitting diode and a phototransistor detector within a compact SOP-4 surface-mount package. The device provides electrical isolation between input and output circuits with a rated isolation voltage of 3750 Vrms. Key electrical parameters include a forward voltage of 1.2V, a maximum collector-emitter saturation voltage of 100mV at specified currents, and a current transfer ratio ranging from 50% to 600%. The unit supports a maximum load voltage of 80V and operates within a temperature range of -55°C to +110°C.

Feature Summary

  • Provides high-voltage electrical isolation via infrared LED and phototransistor coupling
  • Compact SOP-4 surface-mount design for dense PCB layouts
  • Wide current transfer ratio range for flexible gain selection
  • Robust thermal performance suitable for industrial environments

Applications

  • Digital logic signal transmission and level shifting
  • Power supply control and switching circuits
  • Electrical insulation between system components
  • Impedance transformation in circuit interfaces

Procurement Notes

Verify the specific suffix designation (e.g., VG) against the manufacturer's latest datasheet to ensure compatibility with required safety certifications and tape-and-reel packaging specifications. Confirm that the requested variant matches the exact pinout and isolation voltage ratings defined for the EL357N series before finalizing procurement orders.

Selection Notes

Select this component when a single-channel transistor output isolator is required with a 3750 Vrms isolation rating. The wide CTR range allows adaptation for various feedback loop gains. Ensure the application voltage does not exceed the 80V output limit and that the operating environment remains within the specified -55°C to +110°C temperature window.

Part Context

The EL357NE-VG belongs to the EL357N-G series of phototransistor photocouplers. This family is designed for applications requiring reliable signal isolation in compact form factors. The series is widely utilized in industrial control, communication equipment, and power management systems where galvanic isolation is critical for safety and noise immunity.

Replacement Considerations

Direct substitutes within the same product line include variants such as EL357N(C)(TA)-VG, EL357N(B)(TA)-VG, and EL357N(D)(TA)-VG. These parts share identical functional characteristics and pin configurations but may differ in specific binning or packaging details. Verify cross-reference data sheets for any minor parameter deviations.

EL357NE-VGEL357NE-VG

Click on the inquiry