EL814S(TB)-V

Overview

The EL814S(TB)-V is a single-channel optocoupler featuring an AC/DC input and phototransistor output. It utilizes two infrared emitting diodes connected in inverse parallel, optically coupled to a phototransistor detector. The device provides high isolation voltage of 5000 Vrms between input and output. Key electrical parameters include a collector-emitter breakdown voltage of 80 V, a typical forward voltage of 1.2 V, and a maximum DC forward current of 60 mA. The current transfer ratio ranges from 50% to 150% at 1 mA. Operating temperature spans from -55°C to 110°C.

Feature Summary

• AC Input-Transistor Output Optocoupler with dual infrared LEDs in inverse parallel configuration
• High isolation voltage capability of 5000 Vrms between input and output circuits
• Wide operating temperature range suitable for industrial environments (-55°C to 110°C)
• Compact surface mount package design compliant with RoHS standards

Applications

• Digital logic signal transmission and conversion
• Power supply control and switching circuits
• Electrical insulation isolation between circuits and systems
• Impedance transformation in electronic interfaces

Procurement Notes

Verify the specific suffix (TB) corresponds to the required surface mount package variant during procurement. Confirm compliance requirements such as UL recognition or VDE approval if mandated by the end application. Ensure the ordering part number matches the exact pin configuration and tape/reel specifications provided in the official Everlight datasheet to avoid assembly errors.

Selection Notes

Select this component when AC input detection is required alongside standard DC signaling capabilities within a single channel. The inverse parallel LED configuration allows bidirectional current flow for AC applications. Consider the 80 V collector-emitter voltage rating for low-voltage switching tasks. Verify that the surface mount footprint aligns with the PCB layout constraints before finalizing the design.

Part Context

The EL814 series comprises devices with two infrared emitting diodes connected in inverse parallel, optically coupled to a phototransistor detector. This series includes both DIP and surface mount variants. The EL814S(TB)-V specifically denotes the surface mount version. The series is designed for general-purpose isolation applications requiring compact packaging and reliable performance across wide temperature ranges.

Replacement Considerations

Cross-reference with other EL814 series surface mount variants such as EL814S1(A)(TA)-V or EL814S1(A)(TD)-V for package compatibility. Verify pinout alignment and electrical parameter equivalence before substitution. Consult the manufacturer's official replacement guide for confirmed equivalent part numbers.