EL816(S1)(C)(TB)

Overview

The EL816(S1)(C)(TB) is a single-channel transistor output optocoupler manufactured by Everlight Electronics Co Ltd. It features an infrared emitting diode optically coupled to an NPN phototransistor detector, providing electrical isolation between input and output circuits. The device is housed in a compact surface-mount DIP-4 package, specifically the SMD variant designated by the suffix (S1). Key electrical parameters include a maximum collector-emitter breakdown voltage of 80 V, a maximum forward current of 60 mA, and a maximum dark power of 100 nA. The unit supports a nominal current transfer ratio of 100% at a forward current of 5 mA and collector-emitter voltage of 5 V. It offers a high isolation voltage of 5000 V rms with a creepage distance exceeding 7.62 mm. The component operates within a temperature range of -55 °C to +110 °C and complies with RoHS standards.

Feature Summary

• High isolation voltage capability of 5000 V rms between input and output channels
• Compact surface-mount DIP-4 package design for space-constrained applications
• Wide operating temperature range extending up to +110 °C
• Compliance with RoHS directives and UL/VDE approval standards

Applications

• Signal isolation in industrial control systems
• Data transmission protection in communication interfaces
• Switching applications in consumer electronics
• Power supply feedback loops requiring galvanic isolation

Procurement Notes

Verify the specific suffix configuration against the official Everlight datasheet to ensure compatibility with required packaging and compliance certifications. Confirm that the surface-mount footprint matches the PCB layout specifications. Check for any regional shipping restrictions or lifecycle status updates directly from authorized distributors. Ensure that the procurement source provides valid documentation regarding RoHS compliance and material declarations. Validate that the received components match the exact part number designation to avoid functional mismatches.

Selection Notes

Select this component when a single-channel transistor output optocoupler with high isolation voltage is required in a surface-mount form factor. Consider the 80 V collector-emitter breakdown voltage and 50 mA continuous current limits for circuit design constraints. Evaluate the 100% typical current transfer ratio for signal integrity requirements. Ensure the operating environment stays within the specified -55 °C to +110 °C temperature range. Compare physical dimensions against available board space to confirm the DIP-4 SMD package suitability.

Part Context

The EL816 series comprises transistor output optocouplers featuring infrared LEDs coupled to phototransistors. This family includes various package options such as through-hole DIP and surface-mount variants. The EL816(S1)(C)(TB) represents the surface-mount version with specific tape-and-reel or tube packaging configurations depending on the final suffix. These devices are designed for general-purpose isolation applications where compact size and reliable performance are prioritized.

Replacement Considerations

Direct substitutes may include other EL816 series variants with compatible pinouts and electrical characteristics. Verify equivalent isolation voltage and current transfer ratio specifications before substitution. Cross-reference package dimensions to ensure mechanical fit. Consult Everlight documentation for approved alternative part numbers within the same product line.