EL816(S1)(C)(TD)

Overview

The EL816(S1)(C)(TD) is a single-element transistor output optocoupler manufactured by Everlight Electronics Co Ltd. It features an infrared emitting diode optically coupled to an NPN phototransistor detector in a compact surface-mount DIP-4 package. The device provides high isolation voltage of 5000 V rms between input and output with a creepage distance exceeding 7.62 mm. Key electrical parameters include a collector-emitter breakdown voltage of 80 V, maximum forward current of 60 mA, and maximum on-state current of 50 mA. The nominal current transfer ratio is 100% at IF=5mA and VCE=5V, with a range of 50% to 600%. Operating temperature spans from -55°C to +110°C.

Feature Summary

• High isolation voltage capability of 5000 V rms between input and output circuits
• Compact small outline surface-mount package design for space-constrained applications
• Wide operating temperature range supporting environments up to +110°C
• Compliant with RoHS standards and approved by UL, VDE, SEMKO, NEMKO, DEMKO, FIMKO, and CSA

Applications

• Programmable controllers
• System appliances and measuring instruments
• Telecommunication equipments
• Home appliances such as fan heaters
• Signal transmission between circuits of different potentials and impedances

Procurement Notes

Verify the specific suffix (C)(TD) against the manufacturer's official datasheet to confirm pin configuration, tape-and-reel specifications, and exact compliance certifications. Ensure the component matches the required isolation voltage and current transfer ratio for the target circuit design before procurement.

Selection Notes

Select this component when high isolation voltage and compact surface-mount packaging are required for signal transmission between isolated circuits. Consider the 5000 V rms isolation rating and the -55°C to +110°C operating temperature range for suitability in industrial or telecommunications environments requiring robust galvanic isolation.

Part Context

The EL816 series consists of infrared emitting diodes optically coupled to phototransistor detectors. These devices are available in both wide-lead spacing DIP and SMD options. The series is designed for general-purpose optoisolation applications, offering reliable performance with high current transfer ratios and extensive safety approvals for global deployment.

Replacement Considerations

Cross-reference with other EL816 variants such as EL816(S1)(B)(TD) or EL816(S1)(X)(TA) for package or CTR differences. Verify that substitute parts maintain the same 5000 V rms isolation rating and DIP-4 SMD footprint to ensure mechanical and electrical compatibility.