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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.2A EMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 0.9V Drive
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：200mA
- Rds On (Max) @ Id, Vgs：2.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：26pF @ 10V
- Power - Max：120mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：EMT6
- Grade：-
- Qualification：-
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Overview
The EM6K34T2CR is a dual N-channel enhancement-mode MOSFET manufactured by ROHM Semiconductor. It operates with a drain-source voltage (Vds) of 50 V and supports a continuous drain current (Id) of 200 mA. The device features a typical on-resistance (Rds(on)) of 2.2 Ohms at a gate-source voltage (Vgs) of 0.9 V, enabling efficient low-voltage drive applications. The threshold voltage (Vgs(th)) is specified at 800 mV. Power dissipation (Pd) is rated at 150 mW. The component utilizes an SOT-563-6 surface-mount package and functions within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact SOT-563-6 surface-mount package
- Optimized for 0.9 V gate drive operation with low threshold voltage
- Enhancement mode technology designed for small-signal switching applications
Applications
- Low-voltage signal switching circuits
- Battery-powered portable electronic devices
- General-purpose logic level interface applications
Procurement Notes
Verify the specific ordering suffix against official ROHM documentation to confirm exact packaging and tape specifications. Ensure that the procurement channel provides valid traceability for RoHS compliance status. Cross-reference the manufacturer part number directly with the datasheet to avoid substitution errors due to minor suffix variations.
Selection Notes
Select this component when a dual N-channel MOSFET is required for 50 V applications driven by low voltage signals around 0.9 V. The 2.2 Ohm on-resistance suits low-current tasks up to 200 mA. Consider the SOT-563-6 footprint constraints and the 150 mW power dissipation limit during thermal design. Verify compatibility with the target circuit's operating temperature range of -55°C to +150°C.
Part Context
This device belongs to the EM6K34 series of dual N-channel MOSFETs from ROHM. It shares the same electrical characteristics as the UM6K34NTCN but differs in package type, utilizing SOT-563-6 instead of SOT-363-6. The series is designed for low-voltage drive efficiency in compact consumer electronics.
Replacement Considerations
The UM6K34NTCN offers identical electrical performance but uses an SOT-363-6 package. Direct pin-to-pin replacement requires verifying package dimension compatibility. No other direct substitutes are confirmed in the provided data.
